Gallium arsenide is a III-V direct band gap semiconductor with a zinc blende crystal structure, widely used in electronics and optoelectronics.
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CAS 1303-00-0
Europium(III) oxide
Rare earth oxide for electronic chemicals
Zinc telluride
semiconductor and photoconductor material
Trans-4-(3,4,5-Trifluorophenyl)-trans-4'-propylbicyclohexane
liquid crystal material
N-([1,1'-biphenyl]-4-yl)dibenzo[b,d]furan-4-amine
Electronic chemical intermediate
gallanylidynearsane
JBRZTFJDHDCESZ-UHFFFAOYSA-N
[Ga]#[As]